IXTA80N10T7

IXYS

IXTA80N10T7

Datasheet

Analog & Power

MOSFET N-CH 100V 80A TO263-7

ObsoleteTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3040 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchMV™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 100µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation230W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackageTO-263-7 (IXTA)

Environmental

Operating Temperature-55°C~175°C(TJ)