IXTA7N60P

IXYS

IXTA7N60P

Analog & Power

MOSFET N-CH 600V 7A D2-PAK

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.1Ohm @ 3.5A, 10V
Base Product NumberIXTA7
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 100µA

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)