IXTA76P10T

IXYS

IXTA76P10T

Analog & Power

MOSFET P-CH 100V 76A TO263

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 38A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13700 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchP™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Max Power Dissipation298W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)