Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 3A, 0V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 25 V |
| Manufacturer | IXYS |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | Depletion |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-to-Source Voltage | 1000 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Max Power Dissipation | 300W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AA |
| Operating Temperature | -55°C~150°C(TJ) |
|---|