IXTA5N50P

IXYS

IXTA5N50P

Analog & Power

MOSFET N-CH 500V 4.8A TO263

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.4Ohm @ 2.4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusObsolete
SeriesPolarHV™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 50µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.8A (Tc)
Max Power Dissipation89W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)