IXTA3N100D2HV

IXYS

IXTA3N100D2HV

Analog & Power

MOSFET N-CH 1000V 3A TO263HV

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6Ohm @ 1.5A, 0V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1020 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
SeriesDepletion
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)0V
Current - Continuous Drain (Id) @ 25°C3A (Tj)
Max Power Dissipation125W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263HV

Environmental

Operating Temperature-55°C~150°C(TJ)