IXTA1N100P

IXYS

IXTA1N100P

Analog & Power

MOSFET N-CH 1000V 1A TO263

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15Ohm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds331 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
SeriesPolar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 50µA

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Max Power Dissipation50W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)