IXKR25N80C

IXYS

IXKR25N80C

Analog & Power

MOSFET N-CH 800V 25A ISOPLUS247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs150mOhm @ 18A, 10V
Base Product NumberIXKR25
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs355 nC @ 10 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 2mA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C25A (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageISOPLUS247™

Environmental

Operating Temperature-40°C~150°C(TJ)