IXKP10N60C5M

IXYS

IXKP10N60C5M

Analog & Power

MOSFET N-CH 600V 5.4A TO220ABFP

ObsoleteTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs385mOhm @ 5.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 100 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusObsolete
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 340µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220ABFP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)