IXKN75N60C

IXYS

IXKN75N60C

Analog & Power

MOSFET N-CH 600V 75A SOT-227B

ActiveSOT-227-4, miniBLOCAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs36mOhm @ 50A, 10V
Base Product NumberIXKN75
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs500 nC @ 10 V
ManufacturerIXYS
Mounting TypeChassis Mount
Product StatusActive
SeriesCoolMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 5mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Max Power Dissipation560W (Tc)

Mechanical

PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B

Environmental

Operating Temperature-40°C ~ 150°C (TJ)