Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9A, 10V |
|---|---|
| Base Product Number | IXKG25 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 10 V |
| Manufacturer | IXYS |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Drain-to-Source Voltage | 800 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Max Power Dissipation | 250W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | ISO264™ |
| Operating Temperature | -55°C~150°C(TJ) |
|---|