IXFX32N80P

IXYS

IXFX32N80P

Analog & Power

MOSFET N-CH 800V 32A PLUS247-3

ActiveTO-247-3 VariantAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs270mOhm @ 16A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8800 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 8mA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Max Power Dissipation830W (Tc)

Mechanical

Package / CaseTO-247-3 Variant
Supplier Device PackagePLUS247™-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)