IXFX250N10P

IXYS

IXFX250N10P

Analog & Power

MOSFET N-CH 100V 250A PLUS247-3

ActiveTO-247-3 VariantAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6.5mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16000 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C250A (Tc)
Max Power Dissipation1250W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3 Variant
Supplier Device PackagePLUS247™-3

Environmental

Operating Temperature-55°C ~ 175°C (TJ)