IXFT32N50

IXYS

IXFT32N50

Datasheet

Analog & Power

MOSFET N-CH 500V 32A TO268

ObsoleteTO-268-3, D³Pak (2 Leads + Tab), TO-268AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs150mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5700 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 4mA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Max Power Dissipation360W (Tc)

Mechanical

PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)