IXFT14N80P

IXYS

IXFT14N80P

Analog & Power

MOSFET N-CH 800V 14A TO268

ActiveTO-268-3, D³Pak (2 Leads + Tab), TO-268AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs720mOhm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 4mA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Max Power Dissipation400W (Tc)

Mechanical

PackageTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device PackageTO-268AA

Environmental

Operating Temperature-55°C ~ 150°C (TJ)