IXFR24N100Q3

IXYS

IXFR24N100Q3

Analog & Power

MOSFET N-CH 1000V 18A ISOPLUS247

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs490mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7200 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
SeriesHiPerFET™, Q3 Class
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id6.5V @ 4mA

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Max Power Dissipation500W (Tc)

Mechanical

Package / CaseTO-247-3
Supplier Device PackageISOPLUS247™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)