IXFN82N60Q3

IXYS

IXFN82N60Q3

Analog & Power

MOSFET N-CH 600V 66A SOT227B

ActiveSOT-227-4, miniBLOCAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 41A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13500 pF @ 25 V
ManufacturerIXYS
Mounting TypeChassis Mount
Product StatusActive
SeriesHiPerFET™, Q3 Class
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id6.5V @ 8mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Max Power Dissipation960W (Tc)

Mechanical

PackageTube
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B

Environmental

Operating Temperature-55°C ~ 150°C (TJ)