IXFN180N15P

IXYS

IXFN180N15P

Analog & Power

MOSFET N-CH 150V 150A SOT-227B

ActiveSOT-227-4, miniBLOCAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11mOhm @ 90A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7000 pF @ 25 V
ManufacturerIXYS
Mounting TypeChassis Mount
Product StatusActive
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 4mA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Max Power Dissipation680W (Tc)

Mechanical

PackageBox
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B

Environmental

Operating Temperature-55°C~175°C(TJ)