Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 545 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 41000 pF @ 25 V |
| Manufacturer | IXYS |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | HiPerFET™, TrenchT2™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Drain-to-Source Voltage | 75 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 520A (Tc) |
| Max Power Dissipation | 1250W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | TO-264AA (IXFK) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|