IXFH6N90

IXYS

IXFH6N90

Analog & Power

MOSFET N-CH 900V 6A TO247AD

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2Ohm @ 3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusObsolete
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 2.5mA

Electrical

Drain-to-Source Voltage900 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Max Power Dissipation300W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXFH)

Environmental

Operating Temperature-55°C~150°C(TJ)