IXFH28N50Q

IXYS

IXFH28N50Q

Datasheet

Analog & Power

MOSFET N-CH 500V 28A TO247AD

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs200mOhm @ 14A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusObsolete
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 4mA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Max Power Dissipation375W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXFH)

Environmental

Operating Temperature-55°C~150°C(TJ)