IXFH22N60P

IXYS

IXFH22N60P

Analog & Power

MOSFET N-CH 600V 22A TO247AD

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs350mOhm @ 11A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 4mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Max Power Dissipation400W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXFH)

Environmental

Operating Temperature-55°C~150°C(TJ)