IXFB60N80P

IXYS

IXFB60N80P

Analog & Power

MOSFET N-CH 800V 60A PLUS264

ActiveTO-264-3, TO-264AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs140mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds18000 pF @ 25 V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 8mA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Max Power Dissipation1250W (Tc)

Mechanical

PackageTube
Package / CaseTO-264-3, TO-264AA
Supplier Device PackagePLUS264™

Environmental

Operating Temperature-55°C~150°C(TJ)