IXFA7N100P

IXYS

IXFA7N100P

Analog & Power

MOSFET N-CH 1000V 7A TO263

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.9Ohm @ 3.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2590 pF @ 25 V
ManufacturerIXYS
Mounting TypeSurface Mount
Product StatusActive
SeriesHiPerFET™, Polar
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id6V @ 1mA

Electrical

Drain-to-Source Voltage1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Max Power Dissipation300W (Tc)

Mechanical

PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AA (IXFA)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)