General
| Gate Charge | 335 nC |
|---|---|
| Input Type | Standard |
| Manufacturer | IXYS |
| Mounting Type | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.9 µs |
| Series | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A |

Structured electrical, mechanical and environmental parameters from imported product attributes.
| Gate Charge | 335 nC |
|---|---|
| Input Type | Standard |
| Manufacturer | IXYS |
| Mounting Type | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.9 µs |
| Series | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
|---|---|
| Current - Collector (Ic) (Max) | 86 A |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 357 W |
| Package | Tube |
|---|---|
| Package / Case | i4-Pac™-5 (3 Leads) |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|