FMM60-02TF

IXYS

FMM60-02TF

Datasheet

Analog & Power

MOSFET 2N-CH 200V 33A I4-PAC

Activei4-Pac™-5Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 30A, 10V
Base Product NumberFMM60
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
ManufacturerIXYS
Mounting TypeThrough Hole
Product StatusActive
SeriesHiPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage200V
Current - Continuous Drain (Id) @ 25°C33A
Power - Max125W

Mechanical

PackageTube
Package / Casei4-Pac™-5
Supplier Device PackageISOPLUS i4-PAC™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)