General
| Memory Type | Volatile |
|---|---|
| Technology | SDRAM - DDR4 |
| Access Time | 19 ns |
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | Automotive, AEC-Q100 |
| Write Cycle Time | 15ns |
ISSI, Integrated Silicon Solution Inc
IS46QR16256B-083RBLA1
DatasheetMemory & Storage
Automotive (Tc: -40 to +95C), 4G
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Memory Size | 4Gbit |
|---|---|
| Memory Format | DRAM |
| Memory Interface | POD |
| Clock Frequency | 1.2 GHz |
| Supply Voltage | 1.14V ~ 1.26V |
| Memory Organization | 256M x 16 |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-TWBGA (7.5x13.5) |
Environmental
| Operating Temperature | -40°C ~ 95°C (TC) |
|---|