General
| Memory Type | Volatile |
|---|---|
| Technology | SDRAM - DDR4 |
| Access Time | 19 ns |
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Write Cycle Time | 15ns |
ISSI, Integrated Silicon Solution Inc
IS43QR85120B-075UBL-TR
DatasheetMemory & Storage
4G, 1.2V, DDR4, 512Mx8, 2666MT/s
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Memory Size | 4Gbit |
|---|---|
| Memory Format | DRAM |
| Memory Interface | POD |
| Clock Frequency | 1.333 GHz |
| Supply Voltage | 1.14V ~ 1.26V |
| Memory Organization | 512M x 8 |
Mechanical
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 78-TFBGA |
| Supplier Device Package | 78-TWBGA (10x14) |
Environmental
| Operating Temperature | -40°C ~ 95°C (TC) |
|---|