Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 800 V |
| Manufacturer | Inventchip |
| Mounting Type | Through Hole |
| Product Status | Active |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 3.2V @ 6mA |
| Drain-to-Source Voltage | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Max Power Dissipation | 327W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|