Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2490 pF @ 6 V |
| Manufacturer | International Rectifier |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA |
| Drain-to-Source Voltage | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Max Power Dissipation | 88W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | I-PAK |
| Operating Temperature | -55°C~175°C(TJ) |
|---|