Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V |
| Manufacturer | International Rectifier |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Max Power Dissipation | 1.7W (Ta) |
| Package | Bulk |
|---|---|
| Package / Case | SOT-23-6 |
| Supplier Device Package | Micro6™(TSOP-6) |
| Operating Temperature | -55°C~150°C(TJ) |
|---|