IRLL024NPBF

Name: IRLL024NPBF
Brand: International Rectifier

Analog & Power

MOSFET N-CH 55V 3.1A SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	65mOhm @ 3.1A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Manufacturer	International Rectifier
Mounting Type	Surface Mount
Product Status	Active
Series	HEXFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2V @ 250µA

Drain-to-Source Voltage	55 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
Max Power Dissipation	1W (Ta)

Operating Temperature	-55°C~150°C(TJ)