IRLL014NPBF

International Rectifier

IRLL014NPBF

Analog & Power

MOSFET N-CH 55V 2A SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs140mOhm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 25 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageBulk
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature-55°C~150°C(TJ)