Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3710 pF @ 10 V |
| Manufacturer | International Rectifier |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 105A (Tc) |
| Max Power Dissipation | 3.6W (Ta), 52W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PQFN (5x6) |
| Operating Temperature | -55°C~150°C(TJ) |
|---|