IRFR18N15DPBF

International Rectifier

IRFR18N15DPBF

Analog & Power

MOSFET N-CH 150V 18A DPAK

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs125mOhm @ 11A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5.5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Max Power Dissipation110W (Tc)

Mechanical

PackageBulk
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak

Environmental

Operating Temperature-55°C~175°C(TJ)