IRFP048NPBF

International Rectifier

IRFP048NPBF

Analog & Power

HEXFET POWER MOSFET

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 37A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 25 V
ManufacturerInternational Rectifier
Mounting TypeThrough Hole
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Max Power Dissipation140W (Tc)

Mechanical

PackageBulk
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

Environmental

Operating Temperature-55°C~175°C(TJ)