IRFL014NPBF

International Rectifier

IRFL014NPBF

Analog & Power

MOSFET N-CH 55V 1.9A SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 1.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds190 pF @ 25 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageBulk
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature-55°C~150°C(TJ)