IRFHS8342TR2PBF

International Rectifier

IRFHS8342TR2PBF

Analog & Power

MOSFET N-CH 30V 8.8A/19A TSDSON

Obsolete6-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 8.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusObsolete
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.35V @ 25µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta), 19A (Tc)

Mechanical

PackageBulk
Package / Case6-PowerVDFN
Supplier Device PackagePG-TSDSON-6