IRFHM8337TRPBF-IR

International Rectifier

IRFHM8337TRPBF-IR

Analog & Power

MOSFET N-CH 30V 12A 8PQFN DL

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12.4mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds755 pF @ 15 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.35V @ 25µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Max Power Dissipation2.8W (Ta), 25W (Tc)

Mechanical

PackageBulk
Package / Case8-PowerVDFN
Supplier Device Package8-PQFN-Dual (3.3x3.3), Power33

Environmental

Operating Temperature-55°C~150°C(TJ)