IRFHM4234TRPBF

International Rectifier

IRFHM4234TRPBF

Analog & Power

HEXFET POWER MOSFET

Active8-TQFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.4mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1011 pF @ 13 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusActive
SeriesFASTIRFET™, HEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.1V @ 25µA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Max Power Dissipation2.8W (Ta), 28W (Tc)

Mechanical

PackageBulk
Package / Case8-TQFN Exposed Pad

Environmental

Operating Temperature-55°C ~ 150°C (TJ)