IRF7834PBF

International Rectifier

IRF7834PBF

Analog & Power

MOSFET N-CH 30V 19A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 19A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3710 pF @ 15 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.25V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C19A (Ta)
Max Power Dissipation2.5W (Ta)

Mechanical

PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C~150°C(TJ)