Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 20 V |
| Manufacturer | International Rectifier |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Max Power Dissipation | 2.5W (Ta) |
| Package | Tube |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~150°C(TJ) |
|---|