Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 33A, 10V |
|---|---|
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 13 V |
| Manufacturer | International Rectifier |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Drain-to-Source Voltage | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 160A (Tc) |
| Max Power Dissipation | 2.1W (Ta), 54W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | DirectFET™ Isometric MX |
| Supplier Device Package | DIRECTFET™ MX |
| Operating Temperature | -40°C~150°C(TJ) |
|---|