IRF6216PBF-IR

International Rectifier

IRF6216PBF-IR

Analog & Power

MOSFET P-CH 150V 2.2A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs240mOhm @ 1.3A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1280 pF @ 25 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Max Power Dissipation2.5W (Ta)

Mechanical

PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C~150°C(TJ)