IRF40DM229

International Rectifier

IRF40DM229

Analog & Power

MOSFET N-CH 40V 159A DIRECTFET

ActiveDirectFET™ Isometric MFAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.85mOhm @ 97A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5317 pF @ 25 V
ManufacturerInternational Rectifier
Mounting TypeSurface Mount
Product StatusActive
SeriesStrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 100µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C159A (Tc)
Max Power Dissipation83W (Tc)

Mechanical

PackageBulk
Package / CaseDirectFET™ Isometric MF
Supplier Device PackageDirectFET™ Isometric MF

Environmental

Operating Temperature-55°C~150°C(TJ)