Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 106A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9575 pF @ 50 V |
| Manufacturer | International Rectifier |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 100 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Max Power Dissipation | 375W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | TO-262 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|