Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3mOhm @ 65A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4267 pF @ 25 V |
| Manufacturer | International Rectifier |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 108A (Tc) |
| Max Power Dissipation | 2.5W (Ta), 63W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | DirectFET™ Isometric M4 |
| Supplier Device Package | DirectFET™ Isometric M4 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|