Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 68A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5660 pF @ 25 V |
| Manufacturer | International Rectifier |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain-to-Source Voltage | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 114A (Tc) |
| Max Power Dissipation | 3.3W (Ta), 100W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | DirectFET™ Isometric L8 |
| Supplier Device Package | DIRECTFET L8 |
| Operating Temperature | -55°C~175°C(TJ) |
|---|