AUIRF3808

International Rectifier

AUIRF3808

Analog & Power

AUTOMOTIVE HEXFET N CHANNEL

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7mOhm @ 82A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5310 pF @ 25 V
ManufacturerInternational Rectifier
Mounting TypeThrough Hole
Product StatusActive
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage75 V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Max Power Dissipation330W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C~175°C(TJ)