LD2114AL4

Intel

LD2114AL4

Memory & Storage

IC SRAM 4KBIT PARALLEL 18CDIP

Active18-CDIPMemory & Storage

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Memory TypeVolatile
TechnologySRAM - Asynchronous
Access Time200 ns
ManufacturerIntel
Mounting TypeThrough Hole
Product StatusActive
Write Cycle Time200ns

Electrical

Memory Size4Kbit
Memory FormatSRAM
Memory InterfaceParallel
Supply Voltage4.5V ~ 5.5V
Memory Organization1K x 4

Mechanical

PackageBulk
Package / Case18-CDIP
Supplier Device Package18-CDIP

Environmental

Operating Temperature-40°C~85°C(TA)